epitaxially

常见例句

T he epitaxially lateral overgrowth of GaN on SiO 2 areas is realized and a plana r ELO GaN film is obtained.
在SiO2 衬底上侧向外延生长GaN已经实现 ,并得到了平面的ELOGaN薄膜。
The results show that the W/Mo multilayers h ave a epitaxially grown mode and got polycrystal superlattices.
结果表明,W/Mo纳米多层膜形成多晶外延生长的超晶格结构;
Vacuum sputter deposition techniques were developed to achieve high Hc , with high Ms materials epitaxially grown on Cr underlayers.
使用真空溅射方法在Cr底层上沉积高矫顽力、高饱和磁化强度的磁记录介质。
The single-crystalline Ni film with the body-centered-cubic(bcc) structure are obtained epitaxially on GaAs(001) surface at 170K.
在170K的生长温度下，通过分子束外延在GaAs(001) 表面生长得到体心立方结构金属Ni薄膜。
However, this situation can be improved when depositing a thin pure silicon layer epitaxially on the top of the ribbon, so we got low cost but relatively high efficiency solar cells.
然而如果在这种硅片表面沉积一层高纯硅，然后再在上面做电池，则既保证了效率又大大降低了成本。
Structural properties of epitaxially laterally overgrown (ELO) GaN on patterned GaN "substrates" by hydride vapor phase epitaxy (HVPE) have been investigated.
研究了在刻有图形的GaN“衬底”上用HVPE方法侧向外延生长 (ELO)GaN的结构特性。