schottky barrier diode

基本解释

Series resistance is an important factor confining the response speed of Schottky barrier diode.
串连电阻是制约肖特基二极管响应速度的一个关键因素。
In the way of MOS taking place of the Fast recovery diode and the Schottky barrier diode, it can cut down on-resistance and reduce the rectification loss.
同步整流技术采用低导通电阻的MOS管代替导通压降相对较大的快恢复二极管或肖特基二极管，大大减小了输出整流损耗，效率相对提高。
It has been proved that the value of the voltage drop can be achieved through the extrapolation of the forward current voltage curve when the current through the Schottky barrier diode reach 40A.
通过外推40A大电流下芯片结压降的数值，验证了通过小电流正向电流电压特性曲线来外推预测大电流下芯片结压降值的可行性。

肖特基二极管
The characteristics at the metal/Si interface are similar to that of Schottky barrier diode. Thermionic emission and quantum tunneling are the main current conduction mechanism.
源漏区肖特基接触界面的特性和常规肖特基二极管相似，电流的输运主要以热电子发射和隧道效应为主。
肖特基势垒二极管
Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.
肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。
能源科学技术
肖特基二极管